是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.07 | 其他特性: | HIGH INPUT IMPEDANCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (ID): | 1.2 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 30 pF |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1 W |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VN3205N3P001 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal | |
VN3205N3P003 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal | |
VN3205N3P004 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal | |
VN3205N3P006 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal | |
VN3205N3P016 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal | |
VN3205N3P018 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal | |
VN3205N6 | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
VN3205N8 | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
VN3205N8-G | SUPERTEX |
获取价格 |
Power Field-Effect Transistor, 1.5A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
VN3205N8-G | MICROCHIP |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FET |