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VN2106N3 PDF预览

VN2106N3

更新时间： 2024-11-09 22:15:39
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 458K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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VN2106N3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CYLINDRICAL, O-PBCY-W3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.35
其他特性：HIGH INPUT IMPEDANCE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：0.3 A
最大漏源导通电阻：4 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：5 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-W3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

VN2106N3 数据手册

 浏览型号VN2106N3的Datasheet PDF文件第2页浏览型号VN2106N3的Datasheet PDF文件第3页浏览型号VN2106N3的Datasheet PDF文件第4页 
VN2106  
VN2110  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/ RDS(ON)  
Product marking for SOT-23:  
N1A❋  
BVDGS (max)  
TO-92  
TO-236AB*  
Die†  
60V  
4.0Ω  
4.0Ω  
VN2106N3  
—
–
—
where ❋ = 2-week alpha date code  
100V  
VN2110K1  
VN2110ND  
†MIL visual screening available  
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.  
Features  
Advanced DMOS Technology  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
❏
❏
❏
❏
❏
❏
Commercial and Military versions available  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Low CISS and fast switching speeds  
High input impedance and high gain  
Supertex vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Applications  
❏
❏
❏
❏
❏
❏
Motor controls  
Amplifiers  
Package Options  
Power supply circuits  
Converters  
Switches  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
D
G
S
S G D  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
TO-236AB  
(SOT-23)  
top view  
TO-92  
BVDSS  
BVDGS  
± 20V  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
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