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VN2106N3-G PDF预览

VN2106N3-G

更新时间： 2024-11-10 12:29:15
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关
页数 文件大小 规格书
5页 472K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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VN2106N3-G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-92
包装说明：CYLINDRICAL, R-PBCY-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：8.55Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：0.3 A最大漏源导通电阻：4 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：5 pF
JEDEC-95代码：TO-92JESD-30 代码：R-PBCY-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

VN2106N3-G 数据手册

 浏览型号VN2106N3-G的Datasheet PDF文件第2页浏览型号VN2106N3-G的Datasheet PDF文件第3页浏览型号VN2106N3-G的Datasheet PDF文件第4页浏览型号VN2106N3-G的Datasheet PDF文件第5页 
VN2106  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Features  
General Description  
► Free from secondary breakdown  
► Low power drive requirement  
► Ease of paralleling  
The Supertex VN2106 is an enhancement-mode (normally-  
off) transistor that utilizes a vertical DMOS structure  
and Supertex’s well-proven silicon-gate manufacturing  
process. This combination produces a device with the  
power handling capabilities of bipolar transistors, and the  
high input impedance and positive temperature coefficient  
inherent in MOS devices. Characteristic of all MOS  
structures, this device is free from thermal runaway and  
thermally-induced secondary breakdown.  
► Low CISS and fast switching speeds  
► High input impedance and high gain  
Applications  
► Motor controls  
► Converters  
► Amplifiers  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
► Switches  
► Power supply circuits  
► Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Ordering Information  
RDS(ON)  
(max)  
(Ω)  
Package Option  
Device  
TO-92  
BVDSS/BVDGS  
(V)  
VN2106  
VN2106N3-G  
60  
4.0  
-G indicates package is RoHS compliant (‘Green’)  
Absolute Maximum Ratings  
Parameter  
Pin Configuration  
Value  
BVDSS  
Drain-to-Source voltage  
Drain-to-Gate voltage  
DRAIN  
BVDGS  
SOURCE  
Gate-to-Source voltage  
±20V  
GATE  
TO-92 (N3)  
Operating and storage temperature  
Soldering temperature*  
-55°C to +150°C  
+300°C  
Product Marking  
Absolute Maximum Ratings are those values beyond which damage to  
the device may occur. Functional operation under these conditions is not  
implied. Continuous operation of the device at the absolute rating level  
may affect device reliability. All voltages are referenced to device ground.  
SiVN  
2 1 0 6  
Y Y WW  
YY = Year Sealed  
WW = Week Sealed  
*
Distance of 1.6mm from case for 10 seconds.  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
TO-92 (N3)  
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com  
12345

中文翻译

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VN2106N3-G 替代型号

型号 品牌 替代类型 描述 数据表
BS170 ONSEMI

功能相似

 Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

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