VN2110

更新时间： 2024-11-09 22:15:39

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	458K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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VN2110 数据手册

VN2106

VN2110

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

/ R_DS(ON)

Product marking for SOT-23:

N1A❋

BV_DGS(max)

TO-92

TO-236AB*

Die^†

60V

4.0Ω

VN2106N3

—

–

—

where ❋ = 2-week alpha date code

100V

VN2110K1

VN2110ND

^†MIL visual screening available

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Features

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

❏

Commercial and Military versions available

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C_ISSand fast switching speeds

High input impedance and high gain

Supertex vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Applications

❏

Motor controls

Amplifiers

Package Options

Power supply circuits

Converters

Switches

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

S G D

Absolute Maximum Ratings

Drain-to-Source Voltage

TO-236AB

(SOT-23)

top view

TO-92

BV_DSS

BV_DGS

± 20V

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与VN2110相关器件

型号	品牌	获取价格	描述	数据表
VN2110K1	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2110K1-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2110N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met
VN2110N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met
VN2110N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met
VN2110N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met
VN2110N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met
VN2110N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met
VN2110N3P015	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Met
VN2110ND	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs

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