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VN2206N3P001 PDF预览

VN2206N3P001

更新时间: 2024-11-05 21:17:47
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
4页 116K
描述
Small Signal Field-Effect Transistor, 1.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VN2206N3P001 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):1.2 A最大漏源导通电阻:0.35 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):65 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
功耗环境最大值:1 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

VN2206N3P001 数据手册

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