是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, X-XUUC-N | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
Is Samacsys: | N | 其他特性: | HIGH INPUT IMPEDANCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 0.46 A | 最大漏源导通电阻: | 4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JESD-30 代码: | X-XUUC-N | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | UNSPECIFIED |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VN21A15000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block, |
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VN21SP | STMICROELECTRONICS |
获取价格 |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN21_04 | STMICROELECTRONICS |
获取价格 |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN220 | STMICROELECTRONICS |
获取价格 |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN220(011Y) | STMICROELECTRONICS |
获取价格 |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN220(012Y) | STMICROELECTRONICS |
获取价格 |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN220011Y | STMICROELECTRONICS |
获取价格 |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN220012Y | STMICROELECTRONICS |
获取价格 |
HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN2204N3 | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN2204ND | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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