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VN2106N3P003 PDF预览

VN2106N3P003

更新时间: 2024-11-11 03:25:39
品牌 Logo 应用领域
超科 - SUPERTEX 输入元件开关晶体管
页数 文件大小 规格书
4页 117K
描述
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VN2106N3P003 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-W3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.91
其他特性:HIGH INPUT IMPEDANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

VN2106N3P003 数据手册

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