Datasheet > VBT6045C-E3-4W

VBT6045C-E3-4W

更新时间： 2022-02-26 12:02:18

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	88K
描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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VBT6045C-E3-4W 数据手册

VBT6045C-E3

Vishay General Semiconductor

www.vishay.com

100

100 000

10 000

1000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_A= 150 °C

T_A= 100 °C

T_A= 125 °C

T_A= 25 °C

0.1

100

0.1

100

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

T_A= 150 °C

Junction to Case

T_A= 125 °C

T_A= 100 °C

0.1

T_A= 25 °C

0.01

0.001

0.1

0.01

0.1

100

t - Pulse Duration (s)

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-263AB

Mounting Pad Layout

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

0.190 (4.83)

0.160 (4.06)

0.42 (10.66) MIN.

0.055 (1.40)

0.045 (1.14)

0.33 (8.38) MIN.

0.055 (1.40)

0.047 (1.19)

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15 (3.81) MIN.

0.037 (0.940)

0.027 (0.686)

0.08 (2.032) MIN.

0.105 (2.67)

0.095 (2.41)

0.140 (3.56)

0.110 (2.79)

0.105 (2.67)

0.095 (2.41)

0.205 (5.20)

0.195 (4.95)

Revision: 09-Sep-13

Document Number: 89362

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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