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VBT6045C-M3 PDF预览

VBT6045C-M3

更新时间: 2024-11-06 01:26:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 89K
描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT6045C-M3 数据手册

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VBT6045C-M3  
Vishay General Semiconductor  
www.vishay.com  
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.33 V at IF = 10 A  
FEATURES  
TMBS®  
TO-263AB  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C  
• Material categorization: For definitions of compliance  
2
please see www.vishay.com/doc?99912  
1
VBT6045C  
TYPICAL APPLICATIONS  
PIN 1  
PIN 2  
K
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
HEATSINK  
MECHANICAL DATA  
Case: TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Package  
TO-263AB  
2 x 30 A  
45 V  
IF(AV)  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
VRRM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
IFSM  
320 A  
VF at IF = 30 A  
TJ max.  
0.47 V  
150 °C  
Polarity: As marked  
Diode variation  
Common cathode  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VBT6045C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
45  
60  
30  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
320  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Revision: 30-Apr-13  
Document Number: 87959  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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