Datasheet > VBT6045C-E3-4W

VBT6045C-E3-4W

更新时间： 2022-02-26 12:02:18

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	88K
描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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VBT6045C-E3-4W 数据手册

VBT6045C-E3

Vishay General Semiconductor

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

I_F= 10 A

0.44

0.47

0.54

0.33

0.37

0.47

I_F= 15 A

I_F= 30 A

I_F= 10 A

I_F= 15 A

I_F= 30 A

T_A= 25 °C

0.64

(1)

Instantaneous forward voltage per diode

V_F

T_A= 125 °C

0.56

3000

T_A= 25 °C

μA

(2)

Reverse current per diode

V_R= 45 V

I_R

T_A= 125 °C

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VBT64045C

UNIT

per diode

per device

1.5

0.8

Typical thermal resistance

R_JC

°C/W

ORDERING INFORMATION (Example)

PACKAGE

TO-263AB

PREFERRED P/N

VBT6045C-E3/4W

VBT6045C-E3/8W

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

Tube

1.38

800/reel

Tape and reel



RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

D = 0.5

D = 0.8

D = 0.3

D = 0.2

D = 1.0

D = 0.1

D = t_p/T

t_p

100

110

120

130

140

150

Case Temperature (°C)

Average Forward Current (A)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

Revision: 09-Sep-13

Document Number: 89362

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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