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VBT760-E3/8W PDF预览

VBT760-E3/8W

更新时间: 2024-11-05 20:07:31
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
6页 143K
描述
DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

VBT760-E3/8W 技术参数

生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.45
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:7.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VBT760-E3/8W 数据手册

 浏览型号VBT760-E3/8W的Datasheet PDF文件第2页浏览型号VBT760-E3/8W的Datasheet PDF文件第3页浏览型号VBT760-E3/8W的Datasheet PDF文件第4页浏览型号VBT760-E3/8W的Datasheet PDF文件第5页浏览型号VBT760-E3/8W的Datasheet PDF文件第6页 
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3  
www.vishay.com  
Vishay General Semiconductor  
Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.50 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AC  
ITO-220AC  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA  
package)  
2
2
1
1
VT760  
VFT760  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
TYPICAL APPLICATIONS  
TO-263AB  
TO-262AA  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, OR-ing diode, DC/DC  
converters and reverse battery protection.  
K
K
MECHANICAL DATA  
A
Case:  
TO-220AC,  
ITO-220AC,  
TO-263AB  
and  
A
TO-262AA  
NC  
K
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
NC  
VBT760  
VIT760  
NC  
K
K
NC  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
A
HEATSINK  
HEATSINK  
A
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
PRIMARY CHARACTERISTICS  
Mounting Torque: 10 in-lbs maximum  
IF(AV)  
7.5 A  
60 V  
VRRM  
IFSM  
100 A  
0.60 V  
150 °C  
VF at IF = 7.5 A  
TJ max.  
TO-220AC, ITO-220AC,  
TO-263AB, TO-262AA  
Package  
Diode variations  
Single die  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VT760  
VFT760  
VBT760  
VIT760  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
60  
V
A
IF(AV)  
7.5  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
100  
65  
A
mJ  
A
Non-repetitive avalanche energy  
at TJ = 25 °C, L = 60 mH  
Peak repetitive reverse current  
at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C  
IRRM  
1.0  
Isolation voltage (ITO-220AB only)  
from terminal to heat sink t = 1 min  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 15-Dec-16  
Document Number: 89130  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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