VBUS051BD-HD1-GS08

更新时间： 2024-01-23 02:18:17

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	141K
描述
Low Capacitance, Single-Line ESD-Protection Diode

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VBUS051BD-HD1

Vishay Semiconductors

www.vishay.com

Low Capacitance, Single-Line ESD-Protection Diode

FEATURES

• Ultra compact LLP1006-2L package

• Low package profile < 0.4 mm

• 1-line ESD-protection

• High surge current acc. IEC 61000-4-5

I_PPM> 3 A

20856

• Low leakage current I_R< 0.1 μA

20855

• Low load capacitance C_D= 0.9 pF

• ESD-protection acc. IEC 61000-4-2

MARKING (example only)

15 kV contact discharge

15 kV air discharge

• Soldering can be checked by standard vision inspection;

no X-ray necessary

Bar = cathode marking

Y = type code (see table below)

X = date code

21121

• Pin plating NiPdAu (e4) no whisker growth

• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

ORDERING INFORMATION

DEVICE NAME

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

(8 mm TAPE ON 7" REEL)

ORDERING CODE

VBUS051BD-HD1-GS08

VBUS051BD-HD1

8000

PACKAGE DATA

PACKAGE

NAME

TYPE

CODE

MOLDING COMPOUND

MOISTURE

SOLDERING

CONDITIONS

DEVICE NAME

WEIGHT

FLAMMABILITY RATING SENSITIVITY LEVEL

MSL level 1

UL 94 V-0

VBUS051BD-HD1 LLP1006-2L

0.72 mg

260 °C/10 s at terminals

(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITIONS

SYMBOL

I_PPM

VALUE

UNIT

Peak pulse current

Peak pulse power

acc. IEC 61000-4-5; t_p= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

P_PP

°C

ESD immunity

V_ESD

Operating temperature

Storage temperature

T_J

- 55 to + 145

- 55 to + 150

T_STG

ELECTRICAL CHARACTERISTICS

(Ratings at 25 °C ambient temperature, unless otherwise specified)

PARAMETER

TEST CONDITIONS/REMARKS

Number of lines which can be protected

Max. reverse working voltage

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

N_lines

V_RWM

V_R

lines

Reverse stand-off voltage

Reverse voltage

at I_R= 0.1 μA; pin 2 to pin 1

Reverse current

at V_R= V_RWM= 5 V; pin 2 to pin 1

at I_R= 1 mA; pin 2 to pin 1

I_R

< 0.01

7.9

0.1

8.7

μA

Reverse breakdown voltage

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_BR

V_C

6.9

at I_PP= 3 A; acc. IEC 61000-4-5; pin 2 to pin 1

at I_F= 3 A; acc. IEC 61000-4-5; pin 1 to pin 2

at V_R= 0 V; f = 1 MHz; pin 2 to pin 1

V_F

3.4

0.9

C_D

1.3

Rev. 2.0, 23-May-12

Document Number: 81785

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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