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VBUS051CD-HD1-G-08 PDF预览

VBUS051CD-HD1-G-08

更新时间: 2024-02-26 22:52:17
品牌 Logo 应用领域
威世 - VISHAY 瞬态抑制器二极管局域网
页数 文件大小 规格书
5页 534K
描述
Low Capacitance, Single-Line ESD-Protection Diode

VBUS051CD-HD1-G-08 技术参数

生命周期:Active包装说明:R-PBCC-N2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79Is Samacsys:N
最小击穿电压:6.5 V击穿电压标称值:7.6 V
最大钳位电压:14 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PBCC-N2最大非重复峰值反向功率耗散:28 W
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5.5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VBUS051CD-HD1-G-08 数据手册

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VBUS051CD-HD1  
Vishay Semiconductors  
Low Capacitance, Single-Line ESD-Protection Diode  
FEATURES  
• Ultra compact LLP1006-2L package  
• Low package height < 0.4 mm  
• 1-line ESD-protection  
2
1
• Low leakage current < 0.1 μA  
• Low load capacitance CD = 0.6 pF  
20856  
• ESD-protection to IEC 61000-4-2  
9 kV contact discharge  
20855  
9 kV air discharge  
• High surge current acc. IEC61000-4-5 IPP > 2 A  
MARKING (example only)  
• Soldering can be checked by standard vision inspection.  
No X-ray necessary  
• Pin plating NiPdAu (e4) no whisker growth  
XY  
21121  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Bar = cathode marking  
X = date code  
Y = type code (see table below)  
ORDERING INFORMATION  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
(8 MM TAPE ON 7" REEL)  
DEVICE NAME  
ORDERING CODE  
VBUS051CD-HD1  
VBUS051CD-HD1-G-08  
8000  
8000  
PACKAGE DATA  
PACKAGE  
NAME  
TYPE  
CODE  
MOLDING COMPOUND  
FLAMMABILITY RATING SENSITIVITY LEVEL  
MOISTURE  
SOLDERING  
CONDITIONS  
DEVICE NAME  
WEIGHT  
MSL level 1  
UL 94 V-0  
VBUS051CD-HD1 LLP1006-2L  
T
0.72 mg  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
IPPM  
VALUE  
UNIT  
A
Peak pulse current  
Peak pulse power  
Acc. IEC 61000-4-5; tp = 8/20 μs; single shot  
Acc. IEC 61000-4-5; tp = 8/20 μs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
2
PPP  
28  
W
VESD  
VESD  
TJ  
9
kV  
kV  
°C  
°C  
ESD immunity  
9
Operating temperature  
Storage temperature  
- 40 to + 125  
- 40 to + 150  
TSTG  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
Document Number: 81195  
Rev. 1.1, 13-Jul-10  
For technical questions, contact: ESDprotection@vishay.com  
www.vishay.com  
1

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