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VBUS053AZ-HAF-GS08 PDF预览

VBUS053AZ-HAF-GS08

更新时间: 2024-11-05 08:14:15
品牌 Logo 应用领域
威世 - VISHAY 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
6页 84K
描述
USB-OTG BUS-Port ESD-Protection for VBUS = 12 V

VBUS053AZ-HAF-GS08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:S-PDSO-N6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:1.75Is Samacsys:N
其他特性:LOW CAPACITANCE最大击穿电压:10 V
最小击穿电压:6.5 V击穿电压标称值:8.25 V
外壳连接:ANODE最大钳位电压:18 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:S-PDSO-N6
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:240 W元件数量:2
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified参考标准:IEC-61000-4-2, 4-5
最大重复峰值反向电压:5.5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

VBUS053AZ-HAF-GS08 数据手册

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VBUS053AZ-HAF  
Vishay Semiconductors  
USB-OTG BUS-Port ESD-Protection for VBUS = 12 V  
FEATURES  
• Ultra compact LLP75-7L package  
• Low package height < 0.6 mm  
6
1
4
3
5
2
• 3-line USB ESD-protection with max.  
working range = 5.5 V  
• VBUS - protection with 12 V working range  
• Low leakage current  
7
21102  
• Low load capacitance CD = 0.7 pF  
20517  
• ESD-protection to IEC 61000-4-2  
15 kV contact discharge  
15 kV air discharge  
1
MARKING (example only)  
• Surge current acc. IEC 61000-4-5 IPP > 3 A  
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)  
XX  
YY  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
21001  
Dot = Pin 1 marking  
XX = Date code  
YY = Type code (see table below)  
ORDERING INFORMATION  
DEVICE NAME  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
(8 mm TAPE ON 7" REEL)  
ORDERING CODE  
VBUS053AZ-HAF  
VBUS053AZ-HAF-GS08  
15 000  
15 000  
PACKAGE DATA  
PACKAGE  
NAME  
TYPE  
CODE  
MOLDING COMPOUND  
FLAMMABILITY RATING SENSITIVITY LEVEL  
MOISTURE  
SOLDERING  
CONDITIONS  
DEVICE NAME  
WEIGHT  
MSL level 1  
UL 94 V-0  
VBUS053AZ-HAF  
LLP75-7L  
U9  
4.2 mg  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Data line D+, D-, ID: Pin 1, 2 and 3 to ground (pin 7)  
Peak pulse current  
Peak pulse power  
acc. IEC 61000-4-5; tp = 8/20 µs; single shot  
IPPM  
PPP  
3
A
acc. IEC 61000-4-5; tp = 8/20 µs; single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
36  
W
VESD  
VESD  
15  
15  
kV  
kV  
ESD immunity  
V
BUS: Pin 6 to ground (pin 7)  
Peak pulse current  
Peak pulse power  
acc. IEC 61000-4-5; tp = 8/20 µs/single shot  
acc. IEC 61000-4-5; tp = 8/20 µs/single shot  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
Air discharge acc. IEC 61000-4-2; 10 pulses  
Junction temperature  
IPPM  
PPP  
8
A
240  
30  
W
VESD  
VESD  
TJ  
kV  
kV  
°C  
°C  
ESD immunity  
30  
Operating temperature  
Storage temperature  
- 40 to + 125  
- 55 to + 150  
TSTG  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
Document Number: 81845  
Rev. 1.4, 16-Dec-10  
For technical questions, contact: ESDprotection@vishay.com  
www.vishay.com  
1

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