Datasheet > V40100C-E3

V40100C-E3

更新时间： 2024-11-15 14:55:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	287K
描述
Dual High Voltage Trench MOS barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A

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V40100C-E3 数据手册

V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.38 V at I_F= 5 A

FEATURES

TMBS

TO-220AB

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C (for TO-263AB

package)

• Low thermal resistance

V40100C

VF40100C

• Solder bath temperature 275 °C maximum, 10 s, per JESD

22-B106 (for TO-220AB, ITO-220AB, and TO-262AA

package)

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263AB)

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

VB40100C

VI40100C

PIN 1

PIN 2

MECHANICAL DATA

PIN 2

Case: TO-220AB, ITO-220AB, D²PAK (TO-263AB), and

TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

HEATSINK

PIN 3

LINKS TO ADDITIONAL RESOURCES

3D Models

E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

PRIMARY CHARACTERISTICS

Mounting Torque: 10 in-lbs maximum

I_F(AV)

2 x 20 A

V_RRM

100 V

250 A

0.61 V

150 °C

I_FSM

V_Fat I_F= 20 A

T_Jmax.

TO-220AB, ITO-220AB, D²PAK(TO-263AB),

TO-262AA

Package

Circuit configuration

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL V40100C VF40100C VB40100C VI40100C UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

E_AS

250

230

1.0

Non-repetitive avalanche energy at T_J= 25 °C, L = 90 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dV/dt

T_J

10 000

V/μs

°C

-40 to +150

-55 to +150

T_stg

°C

Revision: 07Jun-2023

Document Number: 89042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与V40100C-E3相关器件

型号	品牌	获取价格	描述	数据表
V40100C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS barrier Schottky Rectifier
V40100CHM3/4W	VISHAY	获取价格	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V40100CHM3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100CI	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A
V40100C-M3/4W	VISHAY	获取价格	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V40100C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100G	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
V40100G_11	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100G_12	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100G-E3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

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