V40100PG

更新时间： 2024-01-18 14:30:51

品牌	Logo	应用领域
威世 - VISHAY		整流二极管高压
页数	文件大小	规格书
5页	97K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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中文翻译

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技术参数
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V40100PG 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.78
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.73 V	最大非重复峰值正向电流：	250 A
最高工作温度：	150 °C	最大输出电流：	20 A
最大重复峰值反向电压：	100 V	子类别：	Rectifier Diodes
表面贴装：	NO	技术：	SCHOTTKY
Base Number Matches：	1

V40100PG 数据手册

V40100PG

Vishay General Semiconductor

New Product

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.420 V at I = 5 A

FEATURES

• Trench MOS Schottky Technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-247AD (TO-3P)

TYPICAL APPLICATIONS

PIN 2

CASE

PIN 1

PIN 3

For use in high frequency inverters, switching power

supplies, free-wheeling diodes, oring diode, dc-to-dc

converters and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 20 A

Case: TO-247AD (TO-3P)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade

V_RRM

100 V

I_FSM

250 A

V_Fat I_F= 20 A

T_jmax.

0.67 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs Maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40100PG

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

Maximum average forward rectified (see Fig. 1)

per diode

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dv/dt

1.0

10000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

at I_R= 1.0 mA T_J= 25 °C

V_(BR)

100 (minimum)

at I_F= 5 A

0.490

0.572

0.731

I_F= 10 A

I_F= 20 A

T_J= 25 °C

0.81

Instantaneous forward voltage ⁽¹⁾per

diode

V_F

at I_F= 5 A

I_F= 10 A

I_F= 20 A

0.42

0.50

0.67

T_J= 125 °C

0.73

Document Number 88972

18-Aug-06

www.vishay.com

12 3 4 5

中文翻译

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与V40100PG相关器件

型号	品牌	获取价格	描述	数据表
V40100PG_08	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A
V40100PG-E3/45	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100PGW	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100PGW_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V40100PW	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100PW-M3/4W	VISHAY	获取价格	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-
V40100PW-M34W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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