Datasheet > V40100PGW_15

V40100PGW_15

更新时间： 2024-02-16 03:50:37

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	80K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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V40100PGW_15 数据手册

V40100PGW

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.42 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

TO-3PW

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

Case: TO-3PW

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 20 A

100 V

- halogen-free, RoHS-compliant, and

V_RRM

I_FSM

250 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

E_ASat L = 70 mH

V_Fat I_F= 20 A

T_Jmax.

250 mJ

0.67 V

Polarity: As marked

150 °C

TO-3PW

Mounting Torque: 10 in-lbs maximum

Package



Diode variations

Dual common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40100PGW

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

Non-repetitive avalanche energy at T_J= 25 °C, L = 70 mH per diode

E_AS

250

1.0

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 22-Dec-13

Document Number: 89180

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与V40100PGW_15相关器件

型号	品牌	获取价格	描述	数据表
V40100PGW-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100PW	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100PW-M3/4W	VISHAY	获取价格	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-
V40100PW-M34W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40100PW-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V401-077.76MM	CONNOR-WINFIELD	获取价格	LVCMOS Output Clock Oscillator, 77.76MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, 6
V4010PGW	VISHAY	获取价格	Low forward voltage drop, low power losses
V401-130.0MM	CONNOR-WINFIELD	获取价格	LVCMOS Output Clock Oscillator, 130MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, 6 PI
V40120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40120C_08	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

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