Datasheet > V40150C-E3

V40150C-E3

更新时间： 2023-12-06 20:11:02

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	211K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

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中文翻译

获取价格

数据手册

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V40150C-E3 数据手册

V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.55 V at I_F= 5 A

FEATURES

TMBS^®

TO-220AB

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB

and TO-262AA package)

V40150C

VF40150C

TO-262AA

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

CASE

D²PAK (TO-263AB)

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

VB40150C

VI40150C

Case: TO-220AB, ITO-220AB, D²PAK (TO-263AB),

and TO-262AA

PIN 1

PIN 3

PIN 1

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

click logo to get started

DESIGN SUPPORT TOOLS

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Models

Available

Polarity: as marked

PRIMARY CHARACTERISTICS

Mounting Torque: 10 in-lbs max.

I_F(AV)

2 x 20 A

150 V



V_RRM

I_FSM

160 A

V_Fat I_F= 20 A

T_Jmax.

0.75 V

150 °C

TO-220AB, ITO-220AB,

Package

D²PAK (TO-263AB), TO-262AA

Common cathode

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL V40150C VF40150C VB40150C VI40150C UNIT

Max. repetitive peak reverse voltage

V_RRM

I_F(AV)

150

per device

per diode

Max. average forward rectified current

(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

E_AS

160

150

0.5

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

per diode

I_RRM

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 19-Jun-2018

Document Number: 89048

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

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与V40150C-E3相关器件

型号	品牌	获取价格	描述	数据表
V40150C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
V40150C-E3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40150CHM3/4W	VISHAY	获取价格	DIODE 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V40150CHM3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40150C-M3/4W	VISHAY	获取价格	DIODE 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V40150C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40170C-M3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
V40170PW-M3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V-401BWZ-2A	OKAYA	获取价格	SURGE PROTECTOR
V-401BWZ-3C	OKAYA	获取价格	SURGE PROTECTOR

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