Datasheet > V40170C-M3

V40170C-M3

更新时间： 2023-12-06 20:01:10

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	130K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V40170C-M3 数据手册

V40170C-M3

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.52 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

V40170C

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 20 A

170 V

Base P/N-M3

commercial grade

- halogen-free, RoHS-compliant, and

V_RRM

I_FSM

200 A

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 20 A

T_Jmax.

Package

0.68 V

175 °C

TO-220AB

Polarity: as marked

Circuit configuration

Common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40170C

170

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

I_F(AV)

I_FSM

(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

200

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.66

0.75

0.86

0.52

0.59

0.68

1.3

MAX.

UNIT

I_F= 5 A

I_F= 10 A

I_F= 20 A

I_F= 5 A

T_A= 25 °C

1.20

(1)

Instantaneous forward voltage per diode

V_F

I_F= 10 A

I_F= 20 A

T_A= 125 °C

0.76

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

μA

V_R= 136 V

V_R= 170 V

2.2

(2)

Reverse current per diode

I_R

250

4.2

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  20 ms

(2)

Revision: 01-Dec-16

Document Number: 89941

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与V40170C-M3相关器件

型号	品牌	获取价格	描述	数据表
V40170PW-M3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V-401BWZ-2A	OKAYA	获取价格	SURGE PROTECTOR
V-401BWZ-3C	OKAYA	获取价格	SURGE PROTECTOR
V-401D	OKAYA	获取价格	SURGE ABSORBER
V401-FREQ	CONNOR-WINFIELD	获取价格	PECL Output Clock Oscillator, 65MHz Min, 130MHz Max
V-401LDEZ	OKAYA	获取价格	SURGE PROTECTOR
V4023D	ETC	获取价格	Logic IC
V4027D	ETC	获取价格	Logic IC
V4028D	ETC	获取价格	Logic IC
V402AS32	LITTELFUSE	获取价格	High Energy Metal-Oxide Arrester Blocks