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V40170C-M3

更新时间： 2024-11-15 14:52:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 130K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

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V40170C-M3 数据手册

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V40170C-M3  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.52 V at IF = 5 A  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
3
2
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
1
V40170C  
PIN 1  
PIN 3  
PIN 2  
CASE  
MECHANICAL DATA  
Case: TO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 20 A  
170 V  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS-compliant, and  
VRRM  
IFSM  
200 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 20 A  
TJ max.  
Package  
0.68 V  
175 °C  
TO-220AB  
Polarity: as marked  
Circuit configuration  
Common cathode  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V40170C  
170  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
V
per device  
per diode  
40  
Maximum average forward rectified current  
IF(AV)  
IFSM  
A
A
(fig. 1)  
20  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
200  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +175  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.66  
0.75  
0.86  
0.52  
0.59  
0.68  
1.3  
MAX.  
UNIT  
IF = 5 A  
-
IF = 10 A  
IF = 20 A  
IF = 5 A  
TA = 25 °C  
-
1.20  
-
(1)  
Instantaneous forward voltage per diode  
VF  
V
IF = 10 A  
IF = 20 A  
TA = 125 °C  
-
0.76  
-
TA = 25 °C  
TA = 125 °C  
TA = 25 °C  
TA = 125 °C  
μA  
mA  
μA  
VR = 136 V  
VR = 170 V  
2.2  
-
(2)  
Reverse current per diode  
IR  
-
250  
50  
4.2  
mA  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 20 ms  
(2)  
Revision: 01-Dec-16  
Document Number: 89941  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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