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V40100P-E3/45 PDF预览

V40100P-E3/45

更新时间: 2024-01-10 00:29:36
品牌 Logo 应用领域
威世 - VISHAY 整流二极管高压
页数 文件大小 规格书
4页 103K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V at IF = 5 A

V40100P-E3/45 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
Is Samacsys:N二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.67 V最大非重复峰值正向电流:300 A
最高工作温度:150 °C最大输出电流:20 A
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
Base Number Matches:1

V40100P-E3/45 数据手册

 浏览型号V40100P-E3/45的Datasheet PDF文件第2页浏览型号V40100P-E3/45的Datasheet PDF文件第3页浏览型号V40100P-E3/45的Datasheet PDF文件第4页 
New Product  
V40100P  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.372 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
• Low forward voltage drop, low power  
losses  
• High efficiency operation  
• Low thermal resistance  
• Solder dip 260 °C, 40 s  
3
2
1
TO-247AD (TO-3P)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 2  
PIN 1  
PIN 3  
CASE  
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
2 x 20 A  
VRRM  
100 V  
300 A  
0.60 V  
150 °C  
Case: TO-247AD (TO-3P)  
IFSM  
Epoxy meets UL 94V-0 flammability rating  
VF at IF = 20 A  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V40100P  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
V
per device  
Maximum average forward rectified current (Fig. 1)  
per diode  
40  
20  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
per diode  
IFSM  
300  
superimposed on rated load  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
1.0  
A
V
10 000  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 88939  
Revision: 27-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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