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V40100G-M3/4W PDF预览

V40100G-M3/4W

更新时间: 2024-02-10 18:16:42
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
6页 160K
描述
DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

V40100G-M3/4W 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.38
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.73 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

V40100G-M3/4W 数据手册

 浏览型号V40100G-M3/4W的Datasheet PDF文件第2页浏览型号V40100G-M3/4W的Datasheet PDF文件第3页浏览型号V40100G-M3/4W的Datasheet PDF文件第4页浏览型号V40100G-M3/4W的Datasheet PDF文件第5页浏览型号V40100G-M3/4W的Datasheet PDF文件第6页 
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3  
www.vishay.com  
Vishay General Semiconductor  
Dual High Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.42 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
3
3
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB, ITO-220AB, and  
TO-262AA package)  
2
2
1
1
V40100G  
VF40100G  
PIN 1  
PIN 1  
PIN 2  
CASE  
PIN 2  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 3  
PIN 3  
TO-263AB  
TO-262AA  
TYPICAL APPLICATIONS  
K
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, DC/DC  
converters and reverse battery protection.  
K
2
MECHANICALDATA  
3
1
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
2
1
VB40100G  
VI40100G  
PIN 1  
PIN 2  
K
PIN 1  
PIN 2  
K
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HEATSINK  
PIN 3  
E3 suffix meets JESD 201 class 1A whisker test  
PRIMARY CHARACTERISTICS  
Polarity: As marked  
IF(AV)  
2 x 20 A  
100 V  
Mounting Torque: 10 in-lbs maximum  
VRRM  
IFSM  
200 A  
VF at IF = 20 A  
TJ max.  
0.67 V  
150 °C  
TO-220AB, ITO-220AB,  
TO-263AB, TO-262AA  
Package  
Diode variations  
Common cathode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V40100G  
VF40100G  
VB40100G  
VI40100G  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
40  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
20  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
EAS  
200  
230  
1.0  
A
Non-repetitive avalanche energy  
at TJ = 25 °C, L = 90 mH per diode  
mJ  
Peak repetitive reverse current at tp = 2 μs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
dV/dt  
VAC  
A
V/μs  
V
Voltage rate of change (rated VR)  
10 000  
1500  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Revision: 14-Dec-16  
Document Number: 88970  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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