Datasheet > UTC9012

UTC9012

更新时间： 2024-11-09 03:56:39

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
2页	101K
描述
PNP EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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UTC9012 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

UTC9012 数据手册

UTC 9012

PNP EPITAXIAL SILICON TRANSISTOR

1W OUTPUT AMPLIFIER OF

POTABLE RADIOS IN CLASS B

PUSH-PULL OPERATION

FEATURES

*High total power dissipation. (625mW)

*High collector current. (-500mA)

*Excellent hFE linearity

*Complementary to UTC 9013

TO-92

1:EMITTER 2:BASE 3:COLLECTOR

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-base voltage

SYMBOL

VCBO

VCEO

VEBO

RATING

-40

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector dissipation

Junction Temperature

Storage Temperature

-20

-5

-500

625

°C

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

TEST CONDITIONS

Ic=-100µA,IE=0

MIN TYP MAX UNIT

-40

-20

-5

Ic=-1mA,IB=0

IE=-100µA, Ic=0

VCB=-25V,IE=0

VEB=-3V,IC=0

-100

300

Emitter cutoff current

IEBO

DC current gain

hFE1

VCE=-1V,Ic=-50mA

VCE=-1V,Ic=-500mA

Ic=-500mA,IB=-50mA

VCE=-1V,Ic=-10mA

120

hFE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter on voltage

VCE(sat)

VBE(sat)

VBE(on)

-0.18 -0.6

-0.95 -1.2

-0.6 -0.67 -0.7

CLASSIFICATION OF hFE1

RANK

144-202

RANGE

64-91

78-112

96-135

112-166

190-300

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-029,A

中文翻译

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