Datasheet > UTCHLB124

UTCHLB124

更新时间： 2024-09-17 03:56:35

品牌	Logo	应用领域
ANALOGICTECH		晶体晶体管
页数	文件大小	规格书
3页	143K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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UTCHLB124 数据手册

UTC HLB124

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION

The UTC HLB124 is designed for high voltage, high

speed switching inductive circuits, and amplifier

applications.

FEATURES

* High Speed Switching

* Low Saturation Voltage

* High Reliability

TO-220

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number: HLB124L

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (PULSE)

Base Current (DC)

SYMBOL

RATINGS

UNIT

V_CBO

V_CEO

V_EBO

I_CP

I_B

600

400

Base Current (PULSE)

I_BP

T_J

T_STG

150

Total Power Dissipation (Tc=25℃)

℃

Junction Temperature

Storage Temperature

-40 ~ +150

ELECTRICAL CHARACTERISTICS

(Ta=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_C= 1mA

600

400

I_C= 10mA

I_E= 1mA

V_CB= 600V

0.3

0.8

0.9

1.2

µA

Emitter Cutoff Current

V_EB= 9V, I_C= 0

I_C= 0.1A, I_B= 10mA

I_C= 0.3A, I_B= 30mA

I_C= 0.1A, I_B= 10mA

I_C= 0.3A, I_B= 30mA

V_CE= 5V, I_C= 0.3A

V_CE= 5V, I_C= 0.5A

V_CE= 5V, I_C= 1A

I_EBO

*V_{CE (sat) 1}

*V_{CE (sat) 2}

*V_{BE (sat) 1}

*V_{BE (sat) 2}

*h_FE1

C-E Saturation Voltage

B-E Saturation Voltage

DC Current Gain

*h_FE2

*h_FE3

Gain-Bandwidth Product

f_T

V_CE= 10V, I_C= 0.3A, f=1MHz

MHz

*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%

CLASSIFICATION OF HFE1

UTC UNISONIC TECHNOLOGIES CO., LTD.

www.unisonic.com.tw

QW-R203-029,A

12 3

中文翻译

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