Datasheet > UTCD965ASS

UTCD965ASS

更新时间： 2024-11-08 22:41:39

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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UTCD965ASS 数据手册

UTCD965SS / D965ASS

NPN EPITAXIAL SILICON TRANSISTOR

LOW VOLTAGE HIGH CURRENT

NPN TRANSISTOR

FEATURES

*Collector current up to 5A

* D965SS : Collector-Emitter voltage up to 20 V

* D965ASS : Collector-Emitter voltage up to 30 V

APPLICATIONS

* Audio amplifier

* Flash unit of camera

* Switching circuit

MARKING_(D965SS)MARKING_(D965ASS)

SOT-23

D65

D65A

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS _{( Ta=25°C ,unless otherwise specified )}

PARAMETER

Collector-base voltage

Collector-emitter voltage

D965SS

D965ASS

SYMBOL

RATING

UNIT

VCBO

VCEO

Emitter-base voltage

Collector dissipation(Ta=25°C)

Collector current

VEBO

750

Junction Temperature

Storage Temperature

TSTG

150

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS_{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

D965SS

SYMBOL

BVCBO

TEST CONDITIONS

Ic=100µA,IE=0

MIN TYP MAX UNIT

Ic=1mA,IB=0

BVCEO

D965ASS

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

BVEBO

ICBO

IEBO

IE=10µA,Ic=0

VCB=10V,IE=0

VEB=7V,Ic=0

100

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R206-016,B

12 3

中文翻译

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