Datasheet > UTCHE8050

UTCHE8050

更新时间： 2024-09-17 03:56:35

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
2页	75K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册

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UTCHE8050 数据手册

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR

LOW VOLTAGE HIGH CURRENT

SMALL SIGNAL NPN TRANSISTOR

DESCRIPTION

The UTC HE8050 is a low voltage high current small

signal NPN transistor, designed for Class B push-pull 2W

audio amplifier for portable radio and general purpose

applications.

FEATURES

*Collector current up to 1.5A

*Collector-Emitter voltage up to 25 V

*complimentary to UTC HE8550

TO-92

1:EMITTER 2:COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation(Ta=25°C)

Collector Current

1.5

Junction Temperature

Storage Temperature

TSTG

150

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

Parameter

Symbol

Test conditions

Ic=100µA,IE=0

Ic=2mA,IB=0

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

BVCBO

BVCEO

BVEBO

ICBO

IE=100µA,Ic=0

VCB=35V,IE=0

VEB=6V,Ic=0

100

Emitter Cut-Off Current

IEBO

DC Current Gain

hFE1

VCE=1V,Ic=5mA

VCE=1V,Ic=100mA

VCE=1V,Ic=800mA

Ic=800mA,IB=80mA

VCE=1V,Ic=10mA

VCE=10V,Ic=50mA

VCB=10V,IE=0

135

160

110

hFE2

500

hFE3

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

VBE

Cob

0.5

1.2

1.0

MHz

100

9.0

f=1MHz

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-009,A

中文翻译

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