Datasheet > UTCHE8550

UTCHE8550

更新时间： 2024-09-17 03:56:35

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
2页	76K
描述
PNP EPITAXIAL SILIC ON TRANSISTOR

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中文翻译

获取价格

数据手册

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UTCHE8550 数据手册

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR

LOW VOLTAGE HIGH CURRENT

SMALL SIGNAL PNP TRANSISTOR

DESCRIPTION

The UTC HE8550 is a low voltage high current small

signal PNP transistor, designed for Class B push-pull

2W audio amplifier for portable radio and general purpose

applications.

FEATURES

*Collector current up to 1.5A

*Collector-Emitter voltage up to 25 V

*Complimentary to UTC HE8050

TO-92

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-40

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation(Ta=25℃)

Collector Current

-25

-6

-1.5

Junction Temperature

Storage Temperature

TSTG

150

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(Tj=25°C, unless otherwise specified)}

PARAMETER

SYMBOL

TEST CONDITIONS

Ic=-100µA,IE=0

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

BVCBO

BVCEO

BVEBO

ICBO

-40

-25

-6

Ic=-2mA,IB=0

IE=-100µA,Ic=0

VCB=-35V,IE=0

VEB=-6V,Ic=0

-100

Emitter Cut-Off Current

IEBO

DC Current Gain(note)

hFE1

VCE=-1V,Ic=-5mA

VCE=-1V,Ic=-100mA

VCE=-1V,Ic=-800mA

Ic=-800mA,IB=-80mA

VCE=-1V,Ic=-10mA

VCE=-10V,Ic=-50mA

VCB=-10V,IE=0

170

160

-0.28 -0.5

-0.98 -1.2

-0.66 -1.0

190

hFE2

500

hFE3

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

VBE

Cob

MHz

100

9.0

f=1MHz

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R201-010,A

中文翻译

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