Datasheet > UTCBC337

UTCBC337

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
友顺 - UTC		开关放大器
页数	文件大小	规格书
2页	47K
描述
SWITCHING AND AMPLIFIER APPLICATIONS

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数据手册

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UTCBC337 数据手册

UTC BC337/338

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATIONS

FEATURES

*Suitable for AF-Driver stages and low power output

stages

*Complement to BC327/328

TO-92

1: COLLECTOR 2: BASE 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-emitter voltage

: BC337

SYMBOL

RATING

UNIT

VCES

: BC338

Collector-emitter voltage

VCEO

: BC337

: BC338

Emitter-base voltage

Collector current (DC)

Collector dissipation

Junction Temperature

Storage Temperature

VEBO

TSTG

800

625

150

°C

-55 ~ +150

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-emitter breakdown voltage

: BC337

SYMBOL

BVCEO

TEST CONDITIONS

Ic=10mA, IB=0

MIN TYP MAX UNIT

: BC338

Collector-emitter breakdown voltage

BVCES

Ic=0.1mA, VBE=0

: BC337

: BC338

Emitter-base breakdown voltage

Collector Cut-off Current

: BC337

BVEBO

I_CES

IE=0.1mA, Ic=0

VCE=45V, IB=0

VCE=25V, IB=0

VCE=1V, Ic=100mA

VCE=1V, Ic=300mA

Ic=500mA, IB=50mA

100

630

: BC338

DC current gain

h_FE1

h_FE2

VCE(sat)

100

Collector-emitter saturation voltage

0.7

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-039,B

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