Datasheet > UT62L12816(E)

UT62L12816(E)

更新时间： 2024-10-13 23:41:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
14页	122K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT62L12816(E) 数据手册



UTRON

UT62L12816

128K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.4

REVISION HISTORY

REVISION

DESCRIPTION

Released Date

Preliminary Rev. 0.5

Rev. 1.0

1. Original.

Mar, 2001

1. The symbols CE# and OE# and WE# are revised as. CE and

OE and WE .

2. Separate Industrial and Commercial SPEC.

3. Add access time 55ns range.

1. The extended temperature range is revised.

-20℃~80℃B-20℃~85℃

Jun 21, 2001

Aug 24, 2001

Rev. 1.1

1. Revised Power supply

a、 55ns (max.) for Vcc=2.7V~3.6V

b、 70/100ns (max.) for Vcc=2.5V~3.6V

2. Revised block diagram

3. Revised DC ELECTRICAL CHARACTERISTICS：

a、 Revised V_IHas 2.2V

b、 Revised standby current I_SB1of LL-version

Typical : 3uAB2uA

Maximum : 25uAB20uA

4. Revised AC ELECTRICAL CHARACTERISTICS：

c、 Revised symbol name t_HZBas t_BHZ

d、 Revised symbol name t_LZBas t_BLZ

e、 Revised symbol name t_PWBas t_BW

f、 Revised t_BLZas 10ns (min.)

g、 Revised t_OHas 10ns (min.)

Rev. 1.2

Apr 15, 2002

5. Revised waveforms

6. Revised 48-pin TFBGA package outline dimension：

h、 Rev. 1.1 ball diameter=0.3mm

i、 Rev. 1.2 ball diameter=0.35mm

Order information : add 100ns parts

Rev. 1.3

Rev. 1.4

Aug 05, 2002

May 09, 2003

Add order information for lead free product

UTRON TECHNOLOGY INC.

P80050

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

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