Datasheet > UT62L12816(I)

UT62L12816(I)

更新时间： 2024-10-13 23:41:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	117K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT62L12816(I) 数据手册



UTRON

UT62L12816(I)

128K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.1

REVISION HISTORY

REVISION

DESCRIPTION

DATE

Preliminary Rev. 0.5 Original.

Mar, 2001

1. The symbols CE# and OE# and WE# are revised as.CE

and OE and WE .

2. Separate Industrial and Consumer SPEC.

3. Add access time 55ns range.

Preliminary Rev. 0.6

Jun 21,2001

1. Revised Vcc range：

a、 55ns (max.) for Vcc=2.7V~3.6V

b、 70/100ns (max.) for Vcc=2.5V~3.6V

2. Revised block diagram

3. Revised DC ELECTRICAL CHARACTERISTICS：

c、 Revised standby current

I_SB1=20/3uA(max.) for T_A=0℃~50℃

I_SB2=80/10uA(max.) for T_A=-40℃~85℃

d、 Revised Icc=35/30/25mA(max.)

4. Revised AC ELECTRICAL CHARACTERISTICS：

e、 Revised symbol name t_HZBas t_BHZ

f、 Revised symbol name t_LZBas t_BLZ

g、 Revised symbol name t_PWBas t_BW

5. Revised waveforms

Preliminary Rev. 0.7

Nov 6, 2001

6. Revised I_DR=50/5uA(max.)

1. Revised DC ELECTRICAL CHARACTERISTICS：

a、 Revised V_IHas 2.2V

2. Revised AC ELECTRICAL CHARACTERISTICS：

b、 Revised t_BLZas 10ns (min.)

3. Revised 48-pin TFBGA package outline dimension：

c、 Rev. 0.7：ball diameter=0.3mm

d、 Rev. 1.0：ball diameter=0.35mm

Rev. 1.0

Rev. 1.1

Apr 23,2002

May 09,2003

Add order information for lead free product

UTRON TECHNOLOGY INC.

P80049

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

12 3 4 5 6 7...13

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