Datasheet > UT62L2568

UT62L2568

更新时间： 2024-10-29 23:41:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
14页	139K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT62L2568 数据手册

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UTRON

UT62L2568

256K X 8 BIT LOW POWER CMOS SRAM

Rev. 1.1

REVISION HISTORY

REVISION

Preliminary Rev. 0.1

DESCRIPTION

Release Date

Jun 18, 2001

Jul 30, 2002

Original.

Rev. 1.0

Revised Power supply

a、 55ns (max.) for Vcc=2.7V~3.6V

b、 70/100ns (max.) for Vcc=2.5V~3.6V

Revised DC ELECTRICAL CHARACTERISTICS：

a、 Revised V_IHas 2.2V

b、 Revised standby current I_SB1of LL-version

Typical : 3uAB2uA

Maximum : 25uAB20uA

Revised AC ELECTRICAL CHARACTERISTICS：

a、 Revised t_OHas 10ns (min.)

Revised 36-pin TFBGA package outline dimension：

a、 Rev. 0.1 ball diameter=0.3mm

、

Rev. 1.0 ball diameter=0.35mm

Rev. 1.1

1.Revised “FEATURES” Operating current :

40/35/25mA(I_CCmax)ꢀ20/18/15mA (I_CCtyp.)

2.TRUTH TABLE & DC ELECTRICAL : Delete I_SB2

3.Revised V_TERM: -0.5 to Vcc+0.3V ꢀ-0.5 to 4.6V

4.Added V_OH: 2.7V at Vcc=3.0V

Apr 28, 2003

5.Revised DC (I_CCmax) 45/35/25mAꢀ35/30/25mA

(I_CCtyp.) 30/25/20mAꢀ20/18/15mA

6.Add under/overshoot range of V_IL& V_IH

7.Revised AC t_OHZ*@100ns (max): 35nsꢀ30ns

t_WHZ*(max) :30/30/40ꢀ20/25/30ns

8.Revised “Data retention Characteristics” :

I_DR-LL (Typ.) : NAꢀ1uA, I_DR-L (Typ.) : NAꢀ10uA

I_DR-LL (Max.) : 25uAꢀ6uA

t_R(min) : 5nsꢀ”t_RC”

9.Add order information for lead free product

UTRON TECHNOLOGY INC.

P80059

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

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