Datasheet > UT62L25616(I)

UT62L25616(I)

更新时间： 2024-11-23 23:41:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	117K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT62L25616(I) 数据手册

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UTRON

UT62L25616(I)

256K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.5

REVISION HISTORY

REVISION

DESCRIPTION

Release Date

Preliminary Rev. 0.5 Original.

Mar, 2001

1. The symbols CE# and OE# and WE# are revised as.CE and

OE and WE .

Rev. 1.0

Jul 4,2001

2. Separate Industrial and Consumer SPEC.

3. Add access time 55ns range.

4. The power supply is revised: 3.3Vꢀ3.6V

1. Revised PIN CONFIGURATION

Rev 1.0 : No A17 pinꢁtyping error

Rev 1.1 : add A17 pin.

a. TFBGA package :

ball D3 : NCꢁA17

b. TSOP Ⅱ package :

Rev. 1.1

Oct 18,2001

pin18 : A16ꢁA17

pin19 : A15ꢁA16

pin20 : A14ꢁA15

pin21 : A13ꢁA14

pin22 : A12ꢁA13

pin23 : NCꢁA12

1. Revised AC ELECTRICAL CHARACTERISTICS

_OH: 5nsꢁ10ns (Min.)

_BLZ: 0nsꢁ10ns (Min.)

Rev. 1.2

Rev. 1.3

Mar 19,2002

Apr 17,2002

2. Revised FUNCTIONAL BLOCK DIAGRAM

1. Revised DC ELECTRICAL CHARACTERISTICS：

Revised V_IHas 2.2V

2. Revised 48-pin TFBGA package outline dimension：

Rev. 1.2 : ball diameter=0.3mm

Rev. 1.3 : ball diameter=0.35mm

1. Revised Standby current (LL-Version) : 3uA(typ)ꢁ2uA(typ)

2. Revised operating current (Iccmax) : 45/35/25mAꢁ40/30/25mA

3. Revised DC CHARACTERISTICS :

a. Operating Power Supply Current (Icc)

55ns (max) : 45ꢁ40mA

70ns (typ) : 25ꢁ20mA, 70ns (max) : 35ꢁ30mA

100ns (Typ) : 20ꢁ16mA

b. Standby current(CMOS) :

Rev. 1.4

Rev. 1.5

Dec 18,2002

May 06,2003

LL-version (typ) : 3ꢁ2uA, 25ꢁ20uA

1. Revised V_OH(Typ) : NAꢁ2.7V

2. Add V_IH(max)=V_CC+2.0V for pulse width less than 10ns.

V_IL(min)=V_SS-2.0V for pulse width less than 10ns.

3. Add order information for lead free product

UTRON TECHNOLOGY INC.

P80054

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

12 3 4 5 6 7...13

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