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UT3414L-AE3-R PDF预览

UT3414L-AE3-R

更新时间: 2024-01-27 23:03:58
品牌 Logo 应用领域
友顺 - UTC 开关脉冲光电二极管晶体管
页数 文件大小 规格书
4页 195K
描述
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3

UT3414L-AE3-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.69
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):4.2 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):15 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UT3414L-AE3-R 数据手册

 浏览型号UT3414L-AE3-R的Datasheet PDF文件第2页浏览型号UT3414L-AE3-R的Datasheet PDF文件第3页浏览型号UT3414L-AE3-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
UT3414  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE  
„
DESCRIPTION  
The UT3414 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate voltages  
as low as 1.8V. This device is suitable for use as a load switch or in  
PWM applications.  
„
FEATURES  
* RDS(ON) < 50m@VGS = 4.5V  
* RDS(ON) < 63m@VGS = 2.5V  
* RDS(ON) < 87m@VGS = 1.8V  
* Low capacitance  
* Low gate charge  
* Fast switching capability  
* Avalanche energy specified  
„
SYMBOL  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-23  
Packing  
Lead Free  
Halogen Free  
1
S
2
G
3
D
UT3414L-AE3-R  
UT3414G-AE3-R  
Tape Reel  
„
MARKING  
34Q  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R502-248.E  

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