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UT3416G-AE3-R PDF预览

UT3416G-AE3-R

更新时间: 2024-09-23 07:08:59
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
3页 109K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UT3416G-AE3-R 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:HALOGEN FREE PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):6.5 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UT3416G-AE3-R 数据手册

 浏览型号UT3416G-AE3-R的Datasheet PDF文件第2页浏览型号UT3416G-AE3-R的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UT3416  
Preliminary  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE FIELD EFFECT  
TRANSISTOR  
„
DESCRIPTION  
The UTC UT3416 is advanced n-channel enhancement  
MOSFET which can provide the designer with the best combination  
of excellent RDS (ON), low gate charge and low gate voltages as low  
as 1.8V.When it is used as a load switch or in PWM application, the  
UTC UT3416 can be considered as an ideal.  
„
FEATURES  
* VDS =20 V  
* ID =6.5 A  
* RDS(ON)<22 m@VGS = 4.5 V  
* RDS(ON) <26 m@VGS = 2.5 V  
* RDS(ON) <34 m@VGS = 1.8 V  
„
SYMBOL  
3.Drain  
2.Gate  
1.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-23  
Packing  
Lead Free  
Halogen Free  
1
S
2
G
3
D
UT3416L-AE3-R  
UT3416G-AE3-R  
Tape Reel  
„
MARKING  
34S  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R502-325.c  

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