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UT3458G-AG6-R PDF预览

UT3458G-AG6-R

更新时间: 2024-09-23 21:16:03
品牌 Logo 应用领域
友顺 - UTC 脉冲光电二极管晶体管
页数 文件大小 规格书
4页 124K
描述
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-6

UT3458G-AG6-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):4.1 A
最大漏极电流 (ID):4.1 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):15 A
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

UT3458G-AG6-R 数据手册

 浏览型号UT3458G-AG6-R的Datasheet PDF文件第2页浏览型号UT3458G-AG6-R的Datasheet PDF文件第3页浏览型号UT3458G-AG6-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
UT3458  
Power MOSFET  
4.1A, 60V N-CHANNEL  
POWER MOSFET  
4
5
6
¢
DESCRIPTION  
The UTC UT3458 is N-channel enhancement mode power  
3
2
1
MOSFET using UTC’s advanced technology to provide the  
customers with perfect RDS(ON) and low gate charge. This device can  
be operated with 4.5V low gate voltage.  
SOT-26  
¢
FEATURES  
* VDS=60V  
* ID =4.1A  
* RDS(ON)<0.1@ VGS=10V, ID=3.2A  
RDS(ON)<0.128@ VGS=4.5V, ID=2.8A  
¢
SYMBOL  
¢ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-26  
Packing  
Lead Free  
Halogen Free  
UT3458G-AG6-R  
1
2
3
4
5
6
UT3458L-AG6-R  
D
D
G
S
D
D
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain S: Source  
¢
MARKING  
www.unisonic.com.tw  
1 of 4  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R502-578.C  

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