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UT3443L-AG6-R PDF预览

UT3443L-AG6-R

更新时间: 2024-09-23 07:08:59
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 144K
描述
P-CHANNEL 2.5-V (G-S) MOSFET

UT3443L-AG6-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):20 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

UT3443L-AG6-R 数据手册

 浏览型号UT3443L-AG6-R的Datasheet PDF文件第2页浏览型号UT3443L-AG6-R的Datasheet PDF文件第3页浏览型号UT3443L-AG6-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
UT3443  
Preliminary  
Power MOSFET  
P-CHANNEL 2.5-V (G-S)  
MOSFET  
„
DESCRIPTION  
The UTC UT3443 is a P-channel power MOSFET using UTC’s  
advanced trench technology to provide customers with a minimum  
on-state resistance and extremal low gate charge with a 12V gate  
rating.  
„
FEATURES  
* VDS(V)= -20V  
* ID=-4.5A  
*RDS(ON) < 100m@VGS = -2.5V,  
RDS(ON) < 65m@VGS = -4.5V  
„
SYMBOL  
S (4)  
G (3)  
D (1, 2, 5, 6)  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-26  
Packing  
Lead Free  
Halogen Free  
1, 2, 5, 6  
3
4
UT3443L-AG6-R  
UT3443G-AG6-R  
D
G
S
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
„
MARKING  
wwwunisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-557.a  

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