是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LEAD FREE PACKAGE-6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.69 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 4.5 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT3458 | UTC |
获取价格 |
4.1 A, 60 V (D-S) N-CHANNEL POWER MOSFET | |
UT3458_15 | UTC |
获取价格 |
N-CHANNEL JUNCTIN SILICON FET | |
UT3458G-AB3-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT3458G-AE3-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT3458G-AG6-R | UTC |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
UT3458L-AB3-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT3458L-AG6-R | UTC |
获取价格 |
4.1 A, 60 V (D-S) N-CHANNEL POWER MOSFET | |
UT347 | MICROSEMI |
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RECTIFIERS | |
UT347E3 | MICROSEMI |
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Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC | |
UT35 | TELEDYNE |
获取价格 |
Thicker Film Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy |