是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.68 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT3458G-AG6-R | UTC |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
UT3458L-AB3-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT3458L-AG6-R | UTC |
获取价格 |
4.1 A, 60 V (D-S) N-CHANNEL POWER MOSFET | |
UT347 | MICROSEMI |
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RECTIFIERS | |
UT347E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC | |
UT35 | TELEDYNE |
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Thicker Film Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy | |
UT35E | ETC |
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ASIC | |
UT35ER | ETC |
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ASIC | |
UT35N06 | UTC |
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N-CH | |
UT35N06G-TN3-R | UTC |
获取价格 |
Power Field-Effect Transistor, |