Datasheet > UT3416

UT3416

更新时间： 2024-09-23 07:08:59

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	109K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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UT3416 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT3416

Preliminary

Power MOSFET

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UTC UT3416 is advanced n-channel enhancement

MOSFET which can provide the designer with the best combination

of excellent R_{DS (ON)}, low gate charge and low gate voltages as low

as 1.8V.When it is used as a load switch or in PWM application, the

UTC UT3416 can be considered as an ideal.

FEATURES

* V_DS=20 V

* I_D=6.5 A

* R_DS(ON)<22 mΩ @V_GS= 4.5 V

* R_DS(ON)<26 mΩ @V_GS= 2.5 V

* R_DS(ON)<34 mΩ @V_GS= 1.8 V

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Lead Free

Halogen Free

UT3416L-AE3-R

UT3416G-AE3-R

Tape Reel

MARKING

34S

L: Lead Free

G: Halogen Free

www.unisonic.com.tw

1 of 3

QW-R502-325.c

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UT3416_15	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UT3416G-AE2-R	UTC	获取价格	N-CHANNEL MOSFET
UT3416G-AE3-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UT3416-H	UTC	获取价格	N-CHANNEL MOSFET
UT3416L-AE3-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UT3418	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UT3418_15	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UT3418G-AE2-R	UTC	获取价格	Power Field-Effect Transistor,
UT3418G-AE3-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UT3418L-AE3-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR