Datasheet > UT3418G-AE3-R

UT3418G-AE3-R

更新时间： 2024-01-23 01:07:28

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	144K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UT3418G-AE3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT3418

Power MOSFET

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UT3418 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* R_DS(ON)< 60mΩ @V_GS= 10 V

* R_DS(ON)< 70mΩ @V_GS= 4.5 V

* R_DS(ON)< 155mΩ @V_GS= 2.5 V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Lead Free

Halogen Free

UT3418L-AE3-R

UT3418G-AE3-R

Tape Reel

MARKING

34U

L: Lead Free

G: Halogen Free

www.unisonic.com.tw

1 of 3

QW-R502-226.D

12 3

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