Datasheet > UT3409G-AL3-R

UT3409G-AL3-R

更新时间： 2024-01-05 15:03:15

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	228K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UT3409G-AL3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT3409

Power MOSFET

P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UTC UT3409 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. This device is suitable for use

as a load switch or in PWM applications.



FEATURES

* R_DS(ON)<130mΩ @V_GS= -10V

* R_DS(ON)< 200mΩ @V_GS= -4.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL

 ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

UT3409G-AE2-R

UT3409G-AE3-R

UT3409G-AL3-R

SOT-23-3

SOT-23

Tape Reel

SOT-323

Note: Pin Assignment: S: Source

G: Gate

D: Drain



MARKING

www.unisonic.com.tw

1 of 4

QW-R502-244.E

12 3 4

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