Datasheet > UT3414_15

UT3414_15

更新时间： 2024-01-07 04:41:40

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	195K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UT3414_15 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT3414

Power MOSFET

N-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UT3414 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate voltages

as low as 1.8V. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* R_DS(ON)< 50mΩ @V_GS= 4.5V

* R_DS(ON)< 63mΩ @V_GS= 2.5V

* R_DS(ON)< 87mΩ @V_GS= 1.8V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Lead Free

Halogen Free

UT3414L-AE3-R

UT3414G-AE3-R

Tape Reel

MARKING

34Q

L: Lead Free

G: Halogen Free

www.unisonic.com.tw

1 of 4

QW-R502-248.E

12 3 4

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UT3414L-AE3-R	UTC	获取价格	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Met
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UT3416-H	UTC	获取价格	N-CHANNEL MOSFET
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