Datasheet > UT3413_15

UT3413_15

更新时间： 2024-02-17 19:06:30

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	236K
描述
P-CHANNEL ENHANCEMENT MODE

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UT3413_15 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT3413

Power MOSFET

P-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UTC UT3413 is P-channel enhancement mode Power

MOSFET, designed with high density cell, with fast switching speed,

low on-resistance, excellent thermal and electrical capabilities and

operation with low gate voltages.

This device is suitable for use as a load switch or in PWM

applications.

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

UT3413L-AE2-R

UT3413L-AE3-R

UT3413G-AE2-R

UT3413G-AE3-R

SOT-23-3

SOT-23

Tape Reel

MARKING

34P

L: Lead Free

G: Halogen Free

www.unisonic.com.tw

1 of 5

QW-R502-159.E

12 3 4 5

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与UT3413_15相关器件

型号	品牌	获取价格	描述	数据表
UT3413G-AE2-R	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE
UT3413G-AE3-R	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE
UT3413L-AE2-R	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE
UT3413L-AE3-R	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE
UT3414	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE
UT3414_15	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
UT3414-AE3-R	UTC	获取价格	Transistor
UT3414G-AE3-R	UTC	获取价格	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Met
UT3414L-AE3-R	UTC	获取价格	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Met
UT3416	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR