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UPD46128512-E9X PDF预览

UPD46128512-E9X

更新时间: 2024-01-21 13:47:33
品牌 Logo 应用领域
日电电子 - NEC 存储内存集成电路静态存储器
页数 文件大小 规格书
82页 817K
描述
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

UPD46128512-E9X 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:93
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.87
最长访问时间:70 nsJESD-30 代码:R-PBGA-B93
JESD-609代码:e0长度:12 mm
内存密度:134217728 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:93字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):2 V
最小供电电压 (Vsup):1.7 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:TIN LEAD端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:9 mm
Base Number Matches:1

UPD46128512-E9X 数据手册

 浏览型号UPD46128512-E9X的Datasheet PDF文件第2页浏览型号UPD46128512-E9X的Datasheet PDF文件第3页浏览型号UPD46128512-E9X的Datasheet PDF文件第4页浏览型号UPD46128512-E9X的Datasheet PDF文件第5页浏览型号UPD46128512-E9X的Datasheet PDF文件第6页浏览型号UPD46128512-E9X的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
μPD46128512-X  
128M-BIT CMOS MOBILE SPECIFIED RAM  
8M-WORD BY 16-BIT  
EXTENDED TEMPERATURE OPERATION  
Description  
The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile  
Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function.  
The μPD46128512-X is fabricated with advanced CMOS technology using one-transistor memory cell.  
Features  
8,388,608 words by 16 bits organization  
Asynchronous page read mode  
Synchronous read and write mode  
Burst length: 8 words / 16 words / continuous  
Clock latency: 5, 6, 7, 8, 9, 10  
Burst sequence: Linear burst  
Max clock frequency: 108/83 MHz  
Byte data control: /LB (DQ0 to DQ7), /UB (DQ8 to DQ15)  
Low voltage operation: 1.7 to 2.0 V  
Operating ambient temperature: TA = 30 to +85 °C  
Chip Enable input: /CE1 pin  
Standby Mode input: CE2 pin  
Standby Mode 1: Normal standby (Memory cell data hold valid)  
Standby Mode 2: Density of memory cell data hold is variable  
Supply current  
μPD46128512  
Clock  
Asynchronous Operating Operating  
supply ambient  
voltage temperature  
°C  
At operating  
mA  
frequency initial access  
At standby μA  
MHz  
time  
ns  
(MAX.)  
Density of data hold  
128M 32M 16M 8M  
(TYP.)  
(MAX.)  
(MAX.)  
V
Density of data hold  
(MAX.)  
0M 128M 32M 16M 8M  
0M  
bits bits bits bits bits bits bits bits bits bits  
250 T.B.D. T.B.D. T.B.D. 65 80 T.B.D. T.B.D. T.B.D. 15  
-E9X Note  
-E10X Note  
-E11X  
108  
83  
70  
85  
70  
85  
1.7 to 2.0 30 to +85  
60  
50  
60  
50  
-E12X  
Note Under consideration  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. M17507EJ2V0DS00 (2nd edition)  
Date Published September 2005 CP (K)  
Printed in Japan  
The mark  
shows major revised points.  
2005  

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