Datasheet > UPD46128512F9-CR2

UPD46128512F9-CR2

更新时间： 2022-11-25 16:35:53

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
82页	817K
描述
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

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UPD46128512F9-CR2 数据手册

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

μPD46128512-X

128M-BIT CMOS MOBILE SPECIFIED RAM

8M-WORD BY 16-BIT

EXTENDED TEMPERATURE OPERATION

Description

The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile

Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function.

The μPD46128512-X is fabricated with advanced CMOS technology using one-transistor memory cell.

Features

• 8,388,608 words by 16 bits organization

• Asynchronous page read mode

• Synchronous read and write mode

• Burst length: 8 words / 16 words / continuous

• Clock latency: 5, 6, 7, 8, 9, 10

• Burst sequence: Linear burst

• Max clock frequency: 108/83 MHz

• Byte data control: /LB (DQ0 to DQ7), /UB (DQ8 to DQ15)

• Low voltage operation: 1.7 to 2.0 V

• Operating ambient temperature: T^A= −30 to +85 °C

• Chip Enable input: /CE1 pin

• Standby Mode input: CE2 pin

• Standby Mode 1: Normal standby (Memory cell data hold valid)

• Standby Mode 2: Density of memory cell data hold is variable

Supply current

μPD46128512

Clock

Asynchronous Operating Operating

supply ambient

voltage temperature

°C

At operating

frequency initial access

At standby μA

MHz

time

(MAX.)

Density of data hold

128M 32M 16M 8M

(TYP.)

(MAX.)

Density of data hold

(MAX.)

0M 128M 32M 16M 8M

bits bits bits bits bits bits bits bits bits bits

250 T.B.D. T.B.D. T.B.D. 65 80 T.B.D. T.B.D. T.B.D. 15

-E9X ^Note

-E10X ^Note

-E11X

108

1.7 to 2.0 −30 to +85

-E12X

Note Under consideration

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M17507EJ2V0DS00 (2nd edition)

Date Published September 2005 CP (K)

Printed in Japan

The mark

shows major revised points.

2005

12 3 4 5 6 7...82

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与UPD46128512F9-CR2相关器件

型号	品牌	描述	获取价格	数据表
UPD46128512-X	NEC	128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	获取价格
UPD46128953-E12X	NEC	128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED T	获取价格
UPD46128953-E15X	NEC	128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED T	获取价格
UPD46128953F1-E12X-EB1	RENESAS	暂无描述	获取价格
UPD46128953F1-E12X-EB1	NEC	Standard SRAM, 4MX32, CMOS, PBGA127, 13.0 X 11.5 MM, PLASTIC, FBGA-127	获取价格
UPD46128953F1-E15X-EB1	NEC	4MX32 STANDARD SRAM, PBGA127, 13.0 X 11.5 MM, PLASTIC, FBGA-127	获取价格