是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | LFBGA, | 针数: | 93 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.87 |
最长访问时间: | 70 ns | JESD-30 代码: | R-PBGA-B93 |
JESD-609代码: | e0 | 长度: | 12 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 93 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -30 °C |
组织: | 8MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 最大供电电压 (Vsup): | 2 V |
最小供电电压 (Vsup): | 1.7 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPD46128512F9-CR2 | NEC |
获取价格 |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION | |
UPD46128512-X | NEC |
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128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION | |
UPD46128953-E12X | NEC |
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128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED T | |
UPD46128953-E15X | NEC |
获取价格 |
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED T | |
UPD46128953F1-E12X-EB1 | RENESAS |
获取价格 |
暂无描述 | |
UPD46128953F1-E12X-EB1 | NEC |
获取价格 |
Standard SRAM, 4MX32, CMOS, PBGA127, 13.0 X 11.5 MM, PLASTIC, FBGA-127 | |
UPD46128953F1-E15X-EB1 | NEC |
获取价格 |
4MX32 STANDARD SRAM, PBGA127, 13.0 X 11.5 MM, PLASTIC, FBGA-127 | |
UPD46128953F1-EB1 | NEC |
获取价格 |
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED T | |
UPD46128953-X | NEC |
获取价格 |
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED T | |
UPD461318-55LS1 | ETC |
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x18 Synchronous SRAM |