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UPD44647096AF5-E25-FQ1-A PDF预览

UPD44647096AF5-E25-FQ1-A

更新时间: 2024-09-16 19:50:19
品牌 Logo 应用领域
瑞萨 - RENESAS 时钟静态存储器内存集成电路
页数 文件大小 规格书
42页 761K
描述
IC,SYNC SRAM,QDR,8MX9,CMOS,BGA,165PIN,PLASTIC

UPD44647096AF5-E25-FQ1-A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:BGA, BGA165,11X15,40Reach Compliance Code:compliant
风险等级:5.8最长访问时间:0.45 ns
最大时钟频率 (fCLK):400 MHzI/O 类型:SEPARATE
JESD-30 代码:R-PBGA-B165内存密度:75497472 bit
内存集成电路类型:STANDARD SRAM内存宽度:9
端子数量:165字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX9输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA165,11X15,40封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
电源:1.8 V认证状态:Not Qualified
最大待机电流:0.41 A最小待机电流:1.7 V
子类别:SRAMs最大压摆率:0.69 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOMBase Number Matches:1

UPD44647096AF5-E25-FQ1-A 数据手册

 浏览型号UPD44647096AF5-E25-FQ1-A的Datasheet PDF文件第2页浏览型号UPD44647096AF5-E25-FQ1-A的Datasheet PDF文件第3页浏览型号UPD44647096AF5-E25-FQ1-A的Datasheet PDF文件第4页浏览型号UPD44647096AF5-E25-FQ1-A的Datasheet PDF文件第5页浏览型号UPD44647096AF5-E25-FQ1-A的Datasheet PDF文件第6页浏览型号UPD44647096AF5-E25-FQ1-A的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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