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UPD44164185AF5-E50Y-EQ2-A PDF预览

UPD44164185AF5-E50Y-EQ2-A

更新时间: 2024-11-24 15:56:07
品牌 Logo 应用领域
瑞萨 - RENESAS 时钟双倍数据速率静态存储器内存集成电路
页数 文件大小 规格书
42页 580K
描述
1MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165

UPD44164185AF5-E50Y-EQ2-A 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:BGA
包装说明:LBGA, BGA165,11X15,40针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.52
Is Samacsys:N最长访问时间:0.45 ns
其他特性:PIPELINED ARCHITECTURE最大时钟频率 (fCLK):200 MHz
I/O 类型:SEPARATEJESD-30 代码:R-PBGA-B165
JESD-609代码:e1长度:15 mm
内存密度:18874368 bit内存集成电路类型:DDR SRAM
内存宽度:18功能数量:1
端子数量:165字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA165,11X15,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.5/1.8,1.8 V
认证状态:Not Qualified座面最大高度:1.51 mm
最大待机电流:0.28 A最小待机电流:1.7 V
子类别:SRAMs最大压摆率:0.43 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:13 mm
Base Number Matches:1

UPD44164185AF5-E50Y-EQ2-A 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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