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UPD434016ALG5-A15-7JF PDF预览

UPD434016ALG5-A15-7JF

更新时间: 2024-11-30 23:40:15
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
16页 147K
描述
x16 SRAM

UPD434016ALG5-A15-7JF 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µ
PD434016AL  
4M-BIT CMOS FAST SRAM  
256K-WORD BY 16-BIT  
Description  
The µPD434016AL is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.  
Operating supply voltage is 3.3 V ± 0.3 V.  
The µPD434016AL is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).  
Features  
262,144 words by 16 bits organization  
Fast access time : 15, 17, 20 ns (MAX.)  
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)  
Output Enable input for easy application  
Single +3.3 V power supply  
Ordering Information  
Part number  
Package  
Access time  
Supply current mA (MAX.)  
At operating At standby  
ns (MAX.)  
µPD434016ALLE-A15  
44-pin plastic SOJ  
(10.16 mm (400))  
15  
17  
20  
15  
17  
20  
190  
5
µPD434016ALLE-A17  
180  
170  
190  
180  
170  
µPD434016ALLE-A20  
µPD434016ALG5-A15-7JF  
µPD434016ALG5-A17-7JF  
µPD434016ALG5-A20-7JF  
44-pin plastic TSOP (II)  
(10.16 mm (400))  
(Normal bent)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M12229EJ6V0DS00 (6th edition)  
Date Published May 2000 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1996  
©

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