Datasheet > UPD434016ALLE-A17

UPD434016ALLE-A17

更新时间： 2024-11-30 23:40:15

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
16页	147K
描述
x16 SRAM

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中文翻译

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数据手册

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UPD434016ALLE-A17 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD434016AL

4M-BIT CMOS FAST SRAM

256K-WORD BY 16-BIT

Description

The µPD434016AL is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.

Operating supply voltage is 3.3 V ± 0.3 V.

The µPD434016AL is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Features

• 262,144 words by 16 bits organization

• Fast access time : 15, 17, 20 ns (MAX.)

• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)

• Output Enable input for easy application

• Single +3.3 V power supply

Ordering Information

Part number

Package

Access time

Supply current mA (MAX.)

At operating At standby

ns (MAX.)

µPD434016ALLE-A15

44-pin plastic SOJ

(10.16 mm (400))

190

µPD434016ALLE-A17

180

170

190

180

170

µPD434016ALLE-A20

µPD434016ALG5-A15-7JF

µPD434016ALG5-A17-7JF

µPD434016ALG5-A20-7JF

44-pin plastic TSOP (II)

(10.16 mm (400))

(Normal bent)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M12229EJ6V0DS00 (6th edition)

Date Published May 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1996

12 3 4 5 6 7...16

中文翻译

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