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UPA829TD PDF预览

UPA829TD

更新时间: 2024-02-09 16:20:25
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
24页 116K
描述
TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP

UPA829TD 技术参数

生命周期:Obsolete包装说明:2 X 1.25 MM, SOT-363, 6 PIN
Reach Compliance Code:unknown风险等级:5.76
最大集电极电流 (IC):0.1 A基于收集器的最大容量:0.85 pF
集电极-发射极最大电压:6 V配置:SEPARATE, 2 ELEMENTS
最高频带:L BANDJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):9000 MHzBase Number Matches:1

UPA829TD 数据手册

 浏览型号UPA829TD的Datasheet PDF文件第3页浏览型号UPA829TD的Datasheet PDF文件第4页浏览型号UPA829TD的Datasheet PDF文件第5页浏览型号UPA829TD的Datasheet PDF文件第7页浏览型号UPA829TD的Datasheet PDF文件第8页浏览型号UPA829TD的Datasheet PDF文件第9页 
µPA829TD  
INSERTION POWER GAIN vs. FREQUENCY  
INSERTION POWER GAIN vs. FREQUENCY  
35  
35  
30  
25  
20  
15  
10  
V
CE = 1 V  
= 3 mA  
VCE = 1 V  
IC = 20 mA  
I
C
30  
25  
20  
15  
10  
5
0
5
0
0.1  
1
10  
0.1  
1
10  
Frequency f (GHz)  
Frequency f (GHz)  
INSERTION POWER GAIN vs. FREQUENCY  
INSERTION POWER GAIN vs. FREQUENCY  
35  
35  
VCE = 2 V  
VCE = 2 V  
I
C
= 3 mA  
IC = 20 mA  
30  
25  
20  
15  
10  
30  
25  
20  
15  
10  
5
0
5
0
0.1  
1
10  
0.1  
1
10  
Frequency f (GHz)  
Frequency f (GHz)  
INSERTION POWER GAIN vs. FREQUENCY  
INSERTION POWER GAIN vs. FREQUENCY  
35  
35  
VCE = 3 V  
VCE = 3 V  
I
C
= 3 mA  
IC = 20 mA  
30  
25  
20  
15  
10  
30  
25  
20  
15  
10  
5
0
5
0
0.1  
1
10  
0.1  
1
10  
Frequency f (GHz)  
Frequency f (GHz)  
6
Data Sheet P15357EJ1V0DS  

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