Datasheet > UPA812T_09

UPA812T_09

更新时间： 2024-11-02 01:21:35

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
3页	485K
描述
NPN SILICON HIGH

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中文翻译

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数据手册

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UPA812T_09 数据手册

SILICON TRANSISTOR

UPA812T

NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE STYLE:

2 NE681 Die in a 2 mm x 1.25 mm package

PACKAGE OUTLINE S06

(Top View)

LOW NOISE FIGURE:

NF = 1.4 dB TYP at 1 GHz

2.1 ± 0.1

1.25 ± 0.1

HIGH GAIN:

|S21E|²= 12 dB TYP at 1 GHz

•

HIGH GAIN BANDWIDTH: fT = 7 GHz

0.65

LOW CURRENT OPERATION

2.0 ± 0.2

0.2 (All Leads)

1.3

DESCRIPTION

The UPA812T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

fT, low voltage bias and small size make this device suited for

various hand-held wireless applications.

0.9 ± 0.1

0.7

+0.10

- 0.05

0.15

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

0 ~ 0.1

SYMBOLS

VCBO

VCEO

VEBO

PARAMETERS

UNITS

RATINGS

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

1.5

PIN OUT

1. Collector Transistor 1

2. Base Transistor 2

3. Collector Transistor 2

4. Emitter Transistor 2

5. Emitter Transistor 1

6. Base Transistor 1

Total Power Dissipation

1 Die

2 Die

110

200

Junction Temperature

Storage Temperature

°C

150

Note:

Pin 3 is identified with a circle on the bottom of the package.

TSTG

-65 to +150

Note: 1.Operation in excess of any one of these parameters may

result in permanent damage.

ELECTRICAL CHARACTERISTICS(TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA812T

S06

SYMBOLS

ICBO

PARAMETERS AND CONDITIONS

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

UNITS

μA

MIN

TYP

MAX

0.8

IEBO

μA

0.8

hFE

Forward Current Gain at VCE = 3 V, IC = 7 mA

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

100

7.0

240

Cre²

|S21E|²

GHz

4.5

0.9

1.7

1.4

hFE1/hFE2

hFE Ratio:

0.85

hFE1 = Smaller Value of Q1, or Q2

hFE2 = Larger Value of Q1 or Q2

Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA812T-T1, 3K per reel.

12 3

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与UPA812T_09相关器件

型号	品牌	获取价格	描述	数据表
UPA812T_V1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA812T-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA812TFB	NEC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 10V V(BR)CEO \| 65MA I(C) \| SOT-363
UPA812T-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA812TFB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA812TFB-T1	NEC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 10V V(BR)CEO \| 65MA I(C) \| SOT-363
UPA812TGB	NEC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 10V V(BR)CEO \| 65MA I(C) \| SOT-363
UPA812T-GB	NEC	获取价格	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6
UPA812T-GB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA812TGB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil

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